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| SSD40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 30 20 36 25 150 50 0.4 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 2.5 110 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SSD40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=14A o 0.037 _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 25 250 21 30 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs 18 24 17 3 10 7.2 60 22.5 10 800 380 133 26 _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=18A VDS=24V VGS= 5V _ _ _ _ VDD=15V ID=18A nS VGS=10V RG=3.3[ RD=0.83[ _ _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=18A Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1.3 Unit V A A Test Condition IS=36 A, VGS=0V.Tj=25C VD=VG=0V,VS=1.3 V o 36 150 ISM _ Notes: 1.Pulse width limited by safe operating area. 300us, dutycycleO2%. 2. Pulse widthO http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SSD40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature http://www.SeCoSGmbH.com/ Fig 6. Type Power Dissipation Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SSD40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 12. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SSD40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 5 of 5 |
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